Khamankar, R.B. : rechercher sur Z-Library

Le plus grand référentiel d'articles scientifiques au monde. 70,000,000+ d'articles gratuitement.

Don't use scam websites

Livres
Articles (39)
Les plus populaires
Liste
- Liste
- Tableau

1

A complementary molecular-model (including field and current) for TDDB in SiO2 dielectrics

J.W. McPherson, R.B. Khamankar, A. Shanware

Journal:

Microelectronics Reliability

Année:

2000

Langue:

english

Fichier:

PDF, 657 KB

english, 2000

2

[Japan Soc. Applied Phys 2003 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (10-12 June 2003)] 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) - A high performance 90 nm logic technology with a 37 nm gate length, dual plasma nitrided gate dielectric and differential offset spacer

Hornung, B., Khamankar, R., Niimi, H., Goodwin, M., Robertson, L., Miles, D., Kirkpatrick, B., AlShareef, H., Varghese, A., Bevan, M., Nicollian, P., Chidambaram, P.R., Chakravarthi, S., Gurba, A., Zh

Année:

2003

Langue:

english

Fichier:

PDF, 162 KB

english, 2003

3

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Material dependence of hydrogen diffusion: implications for NBTI degradation

Krishnan, A.T., Chancellor, C., Chakravarthi, S., Nicollian, P.E., Reddy, V., Varghese, A., Khamankar, R.B., Krishnan, S.

Année:

2005

Langue:

english

Fichier:

PDF, 460 KB

english, 2005

4

Complementary model for intrinsic time-dependent dielectric breakdown in SiO[sub 2] dielectrics

J. W. Mcpherson, R. B. Khamankar, A. Shanware

Journal:

Journal of Applied Physics

Année:

2000

Langue:

english

Fichier:

PDF, 621 KB

english, 2000

5

Nonlinearity of ferroelectric capacitors on dram R/W operations

Lee, Jack C., Jiang, Bo, Sudhama, C., Khamankar, Rajesh, Kim, Jiyoung

Journal:

Integrated Ferroelectrics

Année:

1995

Langue:

english

Fichier:

PDF, 490 KB

english, 1995

6

[Japan Soc. Appl. Phys 1995 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (6-8 June 1995)] 1995 Symposium on VLSI Technology. Digest of Technical Papers - A novel low-temperature process for high dielectric constant BST thin films for ULSI DRAM applications

Khamankar, R., Jiang, B., Tsu, R., Hsu, W.-Y., Nulman, J., Summerfelt, S., Anthony, M., Lee, J.

Année:

1995

Langue:

english

Fichier:

PDF, 223 KB

english, 1995

7

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - The roles of hydrogen and holes in trap generation and breakdown in ultra-thin SiON dielectrics

Nicollian, P.E., Krishnan, A.T., Bowen, C., Chakravarthi, S., Chancellor, C.A., Khamankar, R.B.

Année:

2005

Langue:

english

Fichier:

PDF, 493 KB

english, 2005

8

[IEEE 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual - Phoenix, AZ, USA (2007.04.15-2007.04.19)] 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual - The Current Understanding of the Trap Generation Mechanisms that Lead to the Power Law Model for Gate Dielectric Breakdown

Nicollian, Paul E., Krishnan, Anand T., Chancellor, Cathy A., Khamankar, Rajesh B., Chakravarthi, Srinivasan, Bowen, Chris, Reddy, Vijay K.

Année:

2007

Langue:

english

Fichier:

PDF, 681 KB

english, 2007

9

The effect of deposition temperature on the material and electrical properties of PZT thin films for ULSI DRAM applications

Khamankar, Rajesh B., Kim, Jiyoung, Sudhama, C., Lee, Jack C.

Journal:

Integrated Ferroelectrics

Année:

1994

Langue:

english

Fichier:

PDF, 488 KB

english, 1994

10

Base specific chemicals and mutation analysis in Lycopersicon

Jain, H K, Raut, R N, Khamankar, Y G

Journal:

Année:

1968

Langue:

english

Fichier:

PDF, 125 KB

english, 1968

11

Thickness-scaling of sputtered PZT films in the 200 nm range for memory applications

C. Sudhama, J. Kim, R. Khamankar, V. Chikarmane, J. C. Lee

Journal:

Journal of Electronic Materials

Année:

1994

Langue:

english

Fichier:

PDF, 1.22 MB

english, 1994

12

Dopant profile and gate geometric effects on polysilicon gate depletion in scaled MOS

Chang-Hoon Choi, Chidambaram, P.R., Khamankar, R., Machala, C.F., Zhiping Yu, Dutton, R.W.

Journal:

IEEE Transactions on Electron Devices

Année:

2002

Langue:

english

Fichier:

PDF, 389 KB

english, 2002

13

[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - A designer friendly 45nm high performance technology with in-situ C-doped e-SiGe & dual stress liner in SRAM

Khamankar, R., Bowen, C., Bu, H., Corum, D., Fujii, I., Gu, Y., Hornung, B., Kim, T., Kirkpatrick, B., Kirmse, K., Krishnan, A., Lin, C., Liu, L., Lowry, T., Montgomery, C., Olubuyide, O., Prins, S.,

Année:

2008

Langue:

english

Fichier:

PDF, 679 KB

english, 2008

14

[IEEE 2014 International Conference on Communication Systems and Network Technologies (CSNT) - Bhopal, India (2014.04.7-2014.04.9)] 2014 Fourth International Conference on Communication Systems and Network Technologies - Exposing Digital Image Forgeries from Near Duplicate Images

Khamankar, Snehal M., Madankar, M.S.

Année:

2014

Langue:

english

Fichier:

PDF, 403 KB

english, 2014

15

[IEEE International Reliability Physics Symposium - Dallas, TX, USA (30 March-4 April 2003)] 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. - Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics

Shanware, A., Visokay, M.R., Chambers, J.J., Rotondaro, A.L.P., Bu, H., Bevan, M.J., Khamankar, R., Aur, S., Nicollian, P.E., McPherson, J., Colombo, L.

Année:

2003

Langue:

english

Fichier:

PDF, 436 KB

english, 2003

16

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - SRAM Cell Static Noise Margin and VMIN Sensitivity to Transistor Degradation

Krishnan, A. T., Reddy, V., Aldrich, D., Raval, J., Christensen, K., Rosal, J., O'Brien, C., Khamankar, R., Marshall, A., Loh, W-K., McKee, R., Krishnan, S.

Année:

2006

Langue:

english

Fichier:

PDF, 437 KB

english, 2006

17

[IEEE 2002 Symposium on VLSI Technology Digest of Technical Papers - Honolulu, HI, USA (11-13 June 2002)] 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) - Advanced CMOS transistors with a novel HfSiON gate dielectric

Rotondaro, A.L.P., Visokay, M.R., Chambers, J.J., Shanware, A., Khamankar, R., Bu, H., Laaksonen, R.T., Tsung, L., Douglas, M., Kuan, R., Bevan, M.J., Grider, T., McPherson, J., Colombo, L.

Année:

2002

Langue:

english

Fichier:

PDF, 232 KB

english, 2002

18

[IEEE International Electron Devices Meeting. IEDM Technical Digest - Washington, DC, USA (7-10 Dec. 1997)] International Electron Devices Meeting. IEDM Technical Digest - A novel BST storage capacitor node technology using platinum electrodes for Gbit DRAMs

Khamankar, R.B., Kressley, M.A., Visokay, M.R., Moise, T., Xing, G., Nemoto, S., Okumo, Y., Fang, S.J., Wilson, A.M., Gaynor, J.F., Hurd, T.Q., Crenshaw, D.L., Summerfelt, S., Colombo, L.

Année:

1997

Langue:

english

Fichier:

PDF, 494 KB

english, 1997

19

Effects of electrical stress parameters on polarization loss in ferroelectric P(L)ZT thin film capacitors

Khamankar, R.B., Jiyoung Kim,, Sudhama, C., Bo Jiang,, Lee, J.C.

Journal:

IEEE Electron Device Letters

Année:

1995

Langue:

english

Fichier:

PDF, 314 KB

english, 1995

20

[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - Reliability evaluation of HfSiON gate dielectric film with 12.8 Å SiO/sub 2/ equivalent thickness

Shanware, A., McPherson, J., Visokay, M.R., Chambers, J.J., Rotondaro, A.L.P., Bu, H., Bevan, M.J., Khamankar, R., Colombo, L.

Année:

2001

Langue:

english

Fichier:

PDF, 350 KB

english, 2001

21

Effects of nonlinear storage capacitor on DRAM READ/WRITE

Bo Jiang,, Sudhama, C., Khamankar, R., Jiyoung Kim,, Lee, J.C.

Journal:

IEEE Electron Device Letters

Année:

1994

Langue:

english

Fichier:

PDF, 244 KB

english, 1994

22

[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - Resolving the non-uniqueness of the activation energy associated with TDDB for SiO/sub 2/ thin films

Shanware, A., Khamankar, R.B., McPherson, W.

Année:

2000

Langue:

english

Fichier:

PDF, 343 KB

english, 2000

23

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - The Traps that cause Breakdown in Deeply Scaled SiON Dielectrics

Nicollian, Paul E., Krishnan, Anand T., Chancellor, Cathy A., Khamankar, Rajesh B.

Année:

2006

Langue:

english

Fichier:

PDF, 184 KB

english, 2006

24

Intrinsic reoxidation of microwave plasma-nitrided gate dielectrics

H. N. Alshareef, H. Niimi, A. Varghese, M. Bevan, R. Kuan, J. Holt, P. Tiner, R. Khamankar

Année:

2005

Langue:

english

Fichier:

PDF, 317 KB

english, 2005

25

Gate length dependent polysilicon depletion effects

Chang-Hoon Choi,, Chidambaram, P.R., Khamankar, R., Machala, C.F., Zhiping Yu,, Dutton, R.W.

Journal:

IEEE Electron Device Letters

Année:

2002

Langue:

english

Fichier:

PDF, 244 KB

english, 2002

26

[IEEE 1994 VLSI Technology Symposium - Honolulu, HI, USA (7-9 June 1994)] Proceedings of 1994 VLSI Technology Symposium - La doped PZT films for gigabit DRAM technology

Jiyoung Kim,, Khamankar, R., Sudhama, C., Bo Jiang,, Lee, J., Maniar, P., Moazzami, R., Jones, R., Mogab, C.J.

Année:

1994

Langue:

english

Fichier:

PDF, 215 KB

english, 1994

27

[IEEE 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1994)] Proceedings of 1994 IEEE International Electron Devices Meeting - Impact of post processing damage on the performance of high dielectric constant PLZT thin film capacitors for ULSI DRAM applications

Khamankar, R., Jiyoung Kim,, Bo Jiang,, Sudhama, C., Maniar, P., Moazzami, R., Jones, R., Lee, J.

Année:

1994

Langue:

english

Fichier:

PDF, 400 KB

english, 1994

28

[IEEE Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Honolulu, HI, USA (2004.06.17-2004.06.17)] Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - An enhanced 90nm high performance technology with strong performance improvements from stress and mobility increase through simple process changes

Khamankar, R., Bu, H., Bowen, C., Chakravarthi, S., Chidambaram, P.R., Bevan, M., Krishnan, A., Niimi, H., Smith, B., Blatchford, J., Hornung, B., Lu, J.P., Nicollian, P., Kirkpatrick, B., Miles, D.,

Année:

2004

Langue:

english

Fichier:

PDF, 185 KB

english, 2004

29

[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - The Impact of Carbon on the Warpage of e-SiGe Wafers During Laser Anneal

Riley, Deborah J., Bu, Haowen, Jain, Amitabh, Khamankar, Rajesh

Année:

2008

Langue:

english

Fichier:

PDF, 259 KB

english, 2008

30

Molecular model for intrinsic time-dependent dielectric breakdown in SiO 2 dielectrics and the reliability implications for hyper-thin gate oxide

McPherson, J W, Khamankar, R B

Journal:

Semiconductor Science and Technology

Année:

2000

Langue:

english

Fichier:

PDF, 445 KB

english, 2000

31

SPIE Proceedings [SPIE SPIE Advanced Lithography - San Jose, CA (Sunday 22 February 2009)] Design for Manufacturability through Design-Process Integration III - Variations in timing and leakage power of 45nm library cells due to lithography and stress effects

Sadra, Kayvan, Terry, Mark, Rajagopal, Arjun, Soper, Robert A., Kolarik, Donald, Aton, Tom, Hornung, Brian, Khamankar, Rajesh, Hurat, Philippe, Kasthuri, Bala, Ran, Yajun, Verghese, Nishath, Singh, Vi

Année:

2009

Langue:

english

Fichier:

PDF, 257 KB

english, 2009

32

The Impact of Device Asymmetry on the Electrical and Reliability Properties of Ferroelectric PZT for Memory Applications

Kim, Jiyoung, Sudhama, C., Chikarmane, Vinay, Khamankar, Rajesh, Lee, Jack, Tasch, Al

Journal:

MRS Proceedings

Année:

1992

Langue:

english

Fichier:

PDF, 430 KB

english, 1992

33

Ultra-Thin Sputtered Pzt Films for Ulsi Drams

Kim, Jiyoung, Sudhama, C., Khamankar, Rajesh, Lee, Jack

Journal:

MRS Proceedings

Année:

1993

Langue:

english

Fichier:

PDF, 910 KB

english, 1993

34

Effect of Microstructure on the Electrical Characteristics of Sol-Gel Derived PZT Thin Films

Kim, Jiyoung, Khamankar, Rajesh, Jiang, Bo, Mamar, Papu, Moazzami, Reza, Jones, Robert E., Lee, Jack C.

Journal:

MRS Proceedings

Année:

1994

Langue:

english

Fichier:

PDF, 1006 KB

english, 1994

35

Effects of Electron Beam Irradiation on PZT/PLZT Thin Film Capacitors

Jiang, Bo, Kim, Jiyoung, Khamankar, Rajesh, Lee, Insup, Lee, Jack C.

Journal:

MRS Proceedings

Année:

1994

Langue:

english

Fichier:

PDF, 1.13 MB

english, 1994

36

Effects of A.C. Stress on Charge and Voltage Decay Rates of PZT Thin Film Capacitors for DRAM Applications

Khamankar, Rajesh B., Kim, Jiyoung, Jiang, Bo, Lee, Jack

Journal:

MRS Proceedings

Année:

1994

Langue:

english

Fichier:

PDF, 376 KB

english, 1994

37

Extending the Use of NO Dielectrics for DRAM by Ultrathin Silicon Nitride RTCVD with In Situ Ammonia and Hydrogen Pre-Deposition Surface Conditioning

Tiner, Paul A., Khamankar, Rajesh B., Johnston, Clark D., Park, Song C., Pas, Michael F., Violette, Katherine E., Wise, Rick L.

Journal:

MRS Proceedings

Année:

1997

Langue:

english

Fichier:

PDF, 1.11 MB

english, 1997

38

Evolution of Texture and Microstructure in Rough Polycrystalline Silicon for Advanced Dram Applications

Banerjee, A., Wise, R. L., Crenshaw, D. L., Khamankar, R. B., Edwards, Hal

Journal:

MRS Proceedings

Année:

1997

Langue:

english

Fichier:

PDF, 2.39 MB

english, 1997

39

Associative Increases in Amyotrophic Lateral Sclerosis Survival Duration With Non-invasive Ventilation Initiation and Usage Protocols

Khamankar, Nishad, Coan, Grant, Weaver, Barry, Mitchell, Cassie S.

Journal:

Frontiers in Neurology

Année:

2018

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2018